Title:

Investigating Layer Dependence of NbTe2 Using Scanning Probe Microscopy

As the field of computing continues to evolve and advance, it is imperative to continue discovering and designing materials which can handle the future of computing. Quantum computing, which utilizes the quantum mechanical properties of materials, has the potential to solve problems quickly which might take current computers years to solve. One family of materials, the transition metal dichalcogenides (TMD), often exhibit superconductivity and charge density waves, both quantum phenomena. In Dr. Hollen’s lab, we have an ongoing study of TaS2, a TMD, where we have observed strong interlayer stacking dependences, which effects the charge carrier density, and thus the conductivity of the material. For this project, we used a scanning tunneling microscope to image NbTe2, another TMD which is a possible topological material, which may mean that its quantum properties are more stable than other TMDs. We examined the layer order stacking dependencies of NbTe2 by taking dI/dV spectra on both sides of a step edge and looking for distinct features. We did not find any standout features or indications of new electronic states due to the step, indicating that layer order may not be as important as in other TMDs.

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